Research on a novel gate drive circuit of Integrated Gate Commutated Thyristor

According to the principle of IGCT(integrated gate commutated thyristor) and the real demand of IGCT gate drive circuit, a novel topology and its control strategy of IGCT gate drive circuit are proposed. A gate drive circuit for reverse-conducting IGCT with 1100A/4500V ratings adopting hard driven and integrated gate technique has been realized, which possesses high switching speed, simple structure and high reliability. Finally, the experimental results verify the design method and the feasibility of this novel topology.