Title :
Nanocrystalline Diamond-Gated AlGaN/GaN HEMT
Author :
Anderson, Travis J. ; Koehler, Andrew D. ; Hobart, Karl D. ; Tadjer, Marko J. ; Feygelson, Tatyana I. ; Hite, Jennifer K. ; Pate, Bradford B. ; Kub, Francis J. ; Eddy, Charles R.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
Boron-doped p+ nanocrystalline diamond (NCD) films are implemented as heat spreading gate contacts to AlGaN/GaN high-electron-mobility transistors. This device demonstrates a reduced ON-resistance, reduced gate leakage, and significantly increased ON-state current density compared with the reference Ni/Au-gated devices from the same wafer. The NCD gate electrode is thermally stable, chemically stable, optically transparent, and places a heat spreading film in direct contact with the gate edge, which is the hottest part of the device.
Keywords :
III-V semiconductors; aluminium compounds; boron; current density; diamond; gallium compounds; high electron mobility transistors; leakage currents; nanostructured materials; thermal stability; transparency; wide band gap semiconductors; AlGaN-GaN-C:B; ON-resistance; ON-state current density; boron-doped p± nanocrystalline diamond films; chemical stability; gate leakage; heat spreading gate contacts; high-electron-mobility transistors; nanocrystalline diamond-gated AlGaN/GaN HEMT; optical transparency; thermal stability; Aluminum gallium nitride; Diamonds; Gallium nitride; HEMTs; Heating; Logic gates; Thermal stability; Gallium nitride (GaN); high-electron-mobility transistor (HEMT); nanocrystalline diamond;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2013.2282968
