DocumentCode :
48285
Title :
Electrical Repair of Incomplete Back Contact Insulation (P1) in Cu(In,Ga)Se 
Photovoltaic Thin-Film Modules
Author :
Misic, Boris ; Pieters, Bart E. ; Rau, Uwe
Author_Institution :
Forschungszentrum Julich, Julich, Germany
Volume :
5
Issue :
4
fYear :
2015
fDate :
Jul-15
Firstpage :
1197
Lastpage :
1205
Abstract :
Incomplete P1 scribing lines between neighboring Mo back electrodes in Copper indium gallium selenide: Cu(In,Ga)Se2 (CIGS) thin-film modules have been repaired by removing the Mo remnants in the P1 laser line. The repair is achieved by melting and evaporating the Mo remnant with an electrical current. We develop a repair process that is robust to different lengths of the P1 line interruption, to arbitrary defect positions and defect numbers both within one scribing line and the complete module. Furthermore, the repair method provides a reliable feedback about a successful defect repair, whereby affected P1 scribing lines can be located and defects can be counted.
Keywords :
copper compounds; electrochemical electrodes; gallium compounds; indium compounds; insulation; maintenance engineering; molybdenum compounds; photovoltaic cells; selenium compounds; solar cells; ternary semiconductors; thin film devices; P1 laser line; P1 line interruption; arbitrary defect numbers; arbitrary defect positions; copper indium gallium selenide photovoltaic thin-film modules; electrical repair; incomplete P1 scribing lines; incomplete back contact insulation; molybdenum remnant evaporation; molybdenum remnant melting; neighboring molybdenum back electrodes; solar cells; Approximation methods; Conductivity; Current measurement; Heating; Liquids; Maintenance engineering; Solids; Copper indium gallium selenide (Cu(In,Ga)Se2: CIGS); P1; defects; diagnostics; repair; scribing lines;
fLanguage :
English
Journal_Title :
Photovoltaics, IEEE Journal of
Publisher :
ieee
ISSN :
2156-3381
Type :
jour
DOI :
10.1109/JPHOTOV.2015.2422137
Filename :
7097640
Link To Document :
