DocumentCode :
483105
Title :
Research on loss model and junction temperature of IGBT for electric vehicles using PSPICE
Author :
Hu, Wei ; Wen, Xuhui ; Wen, Huiqing ; Liu, Jun
Author_Institution :
Inst. of Electr. Eng., Chinese Acad. of Sci., Beijing
fYear :
2008
fDate :
17-20 Oct. 2008
Firstpage :
4123
Lastpage :
4126
Abstract :
IGBT is one of the key components of motor driving system for electric vehicles, and its reliability directly affects the reliability of the electric vehicles. The reliability of the IGBT is affected by the loss and the junction temperature in working condition. To predict the IGBTpsilas loss and thermal response, especially in the case of adverse dynamic conditions, the dynamic loss model and the junction temperature of power IGBT are studied in this paper. This model is then applied to simulate the loss of Eupecpsilas power IGBT FS450R12KE3 used in a motor driving system for electric vehicles developed by the Institute of Electrical Engineering Chinese Academy of Sciences. Simulation results accurately match the measurement. This work can be extended to evaluate power IGBTs in other automotive application such as DC/DC conversion, EPAS and so on.
Keywords :
SPICE; electric vehicles; insulated gate bipolar transistors; motor drives; power engineering computing; DC-DC conversion; Eupec power IGBT FS450R12KE3; PSPICE; automotive application; electric vehicles; junction temperature; loss model; motor driving system; power IGBT; thermal response; Automotive applications; Electric vehicles; Employee welfare; Insulated gate bipolar transistors; Power system modeling; Power system reliability; Predictive models; SPICE; Temperature; Vehicle dynamics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Machines and Systems, 2008. ICEMS 2008. International Conference on
Conference_Location :
Wuhan
Print_ISBN :
978-1-4244-3826-6
Electronic_ISBN :
978-7-5062-9221-4
Type :
conf
Filename :
4771509
Link To Document :
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