Title :
Discrete ESD protection diode during a system level pulse: Comparison of simulation with measurements
Author :
Holland, Steffen ; Laasch, Ingo ; Bade, Lars
Author_Institution :
NXP Semicond. Germany GmbH, Hamburg
Abstract :
The behavior of a discrete ESD protection diode during a system level ESD pulse was simulated and compared with a time resolved measurement of the real diode. The simulation results for ESD destruction level, location of the damaged zone inside the diode, and the slope of the voltage drop are very close to the measured data. Also a sudden voltage drop caused by the 2nd thermal breakdown was predicted very well by simulation.
Keywords :
diodes; electric breakdown; electrostatic discharge; damaged zone; destruction level; discrete ESD protection diode; system level pulse; thermal breakdown; voltage drop; Breakdown voltage; Circuit simulation; Electrostatic discharge; IEC standards; Inductance; Predictive models; Protection; Pulse measurements; Semiconductor diodes; Surface resistance;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium, 2008. EOS/ESD 2008. 30th
Conference_Location :
Tucson, AZ
Print_ISBN :
978-1-58537-146-4
Electronic_ISBN :
978-1-58537-147-1
