• DocumentCode
    483350
  • Title

    Discrete ESD protection diode during a system level pulse: Comparison of simulation with measurements

  • Author

    Holland, Steffen ; Laasch, Ingo ; Bade, Lars

  • Author_Institution
    NXP Semicond. Germany GmbH, Hamburg
  • fYear
    2008
  • fDate
    7-11 Sept. 2008
  • Firstpage
    76
  • Lastpage
    82
  • Abstract
    The behavior of a discrete ESD protection diode during a system level ESD pulse was simulated and compared with a time resolved measurement of the real diode. The simulation results for ESD destruction level, location of the damaged zone inside the diode, and the slope of the voltage drop are very close to the measured data. Also a sudden voltage drop caused by the 2nd thermal breakdown was predicted very well by simulation.
  • Keywords
    diodes; electric breakdown; electrostatic discharge; damaged zone; destruction level; discrete ESD protection diode; system level pulse; thermal breakdown; voltage drop; Breakdown voltage; Circuit simulation; Electrostatic discharge; IEC standards; Inductance; Predictive models; Protection; Pulse measurements; Semiconductor diodes; Surface resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Overstress/Electrostatic Discharge Symposium, 2008. EOS/ESD 2008. 30th
  • Conference_Location
    Tucson, AZ
  • Print_ISBN
    978-1-58537-146-4
  • Electronic_ISBN
    978-1-58537-147-1
  • Type

    conf

  • Filename
    4772117
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=483350