• DocumentCode
    483369
  • Title

    Novel 190V LIGBT-based ESD protection for 0.35μm Smart Power technology realized on SOI substrate

  • Author

    Gevinti, Eleonora ; Cerati, Lorenzo ; Sambi, Marco ; Dissegna, Mariano ; Cecchetto, Luca ; Andreini, Antonio ; Tazzoli, Augusto ; Meneghesso, Gaudenzio

  • Author_Institution
    STMicroelectron., Agrate Brianza
  • fYear
    2008
  • fDate
    7-11 Sept. 2008
  • Firstpage
    211
  • Lastpage
    220
  • Abstract
    A novel ESD protection implementation based on LIGBT component is presented for 0.35 mum Smart Power HV devices on SOI substrate. A Single Stage LIGBT was designed, characterized and simulated. SOA boundaries are investigated in TLP regime. ESD performances improvements achieved using LIGBT devices are highlighted and a comparison with NDRIFTMOS-based active clamps is presented.
  • Keywords
    electrostatic discharge; insulated gate bipolar transistors; power integrated circuits; ESD protection; SOI substrate; Si; lateral insulated gate bipolar transistor; safe operating area boundaries; size 0.35 mum; smart power HV devices; voltage 190 V; CMOS technology; Clamps; Electrostatic discharge; Isolation technology; Performance analysis; Protection; Semiconductor optical amplifiers; Silicon on insulator technology; Thermal conductivity; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Overstress/Electrostatic Discharge Symposium, 2008. EOS/ESD 2008. 30th
  • Conference_Location
    Tucson, AZ
  • Print_ISBN
    978-1-58537-146-4
  • Electronic_ISBN
    978-1-58537-147-1
  • Type

    conf

  • Filename
    4772136
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=483369