DocumentCode
483370
Title
ESD concept for high-frequency circuits
Author
Issakov, Vadim ; Johnsson, David ; Cao, Yiqun ; Tiebout, Marc ; Mayerhofer, Michael ; Simbürger, Werner ; Maurer, Linus
Author_Institution
Infineon Technol. AG, Neubiberg
fYear
2008
fDate
7-11 Sept. 2008
Firstpage
221
Lastpage
227
Abstract
This paper presents a concept for integration of ESD protection devices without degrading the high-frequency circuit performance. A differential 18 GHz low-noise amplifier (LNA) has been realized in 0.13 mum CMOS. The ESD protection devices are connected using on-chip inductors. The measured JESDHBM performance is > 2 kV including RF-pins.
Keywords
CMOS integrated circuits; HF amplifiers; differential amplifiers; electrostatic discharge; low noise amplifiers; microwave amplifiers; CMOS; ESD protection devices; differential LNA; frequency 18 GHz; high-frequency circuits; low-noise amplifier; on-chip inductor; size 0.13 mum; CMOS technology; Electromagnetic measurements; Electrostatic discharge; Impedance matching; Inductors; Integrated circuit technology; Parasitic capacitance; Protection; Radio frequency; Tuning;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Overstress/Electrostatic Discharge Symposium, 2008. EOS/ESD 2008. 30th
Conference_Location
Tucson, AZ
Print_ISBN
978-1-58537-146-4
Electronic_ISBN
978-1-58537-147-1
Type
conf
Filename
4772137
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