DocumentCode
483383
Title
Active ESD protection design methodology for DC/DC converters
Author
Christoforou, Yorgos ; Deepak, Gajanana
Author_Institution
NXP Semicond., Nijmegen
fYear
2008
fDate
7-11 Sept. 2008
Firstpage
317
Lastpage
324
Abstract
A simple, area and power-loss efficient, portable and robust ESD protection method for DC/DC converters is presented. The method is based on MOS transistors operating in normal mode, replacing the snapback based design methods. Measurement results of a prototype fabricated on silicon showed good agreement with simulation and are reported.
Keywords
DC-DC power convertors; MOSFET; electrostatic discharge; elemental semiconductors; protection; silicon; DC/DC converters; MOS transistors; Si; active ESD protection; silicon; snapback based design methods; DC-DC power converters; Design methodology; Electrostatic discharge; MOSFETs; Parasitic capacitance; Protection; Robustness; Silicon; Switches; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Overstress/Electrostatic Discharge Symposium, 2008. EOS/ESD 2008. 30th
Conference_Location
Tucson, AZ
Print_ISBN
978-1-58537-146-4
Electronic_ISBN
978-1-58537-147-1
Type
conf
Filename
4772150
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