Title :
Active ESD protection design methodology for DC/DC converters
Author :
Christoforou, Yorgos ; Deepak, Gajanana
Author_Institution :
NXP Semicond., Nijmegen
Abstract :
A simple, area and power-loss efficient, portable and robust ESD protection method for DC/DC converters is presented. The method is based on MOS transistors operating in normal mode, replacing the snapback based design methods. Measurement results of a prototype fabricated on silicon showed good agreement with simulation and are reported.
Keywords :
DC-DC power convertors; MOSFET; electrostatic discharge; elemental semiconductors; protection; silicon; DC/DC converters; MOS transistors; Si; active ESD protection; silicon; snapback based design methods; DC-DC power converters; Design methodology; Electrostatic discharge; MOSFETs; Parasitic capacitance; Protection; Robustness; Silicon; Switches; Voltage;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium, 2008. EOS/ESD 2008. 30th
Conference_Location :
Tucson, AZ
Print_ISBN :
978-1-58537-146-4
Electronic_ISBN :
978-1-58537-147-1
