DocumentCode
483454
Title
Low power consumption 43 Gbit/s EAM-LD module with built-in driver IC employing novel cathode-floating bias circuit
Author
Okada, Norio ; Miyahara, Toshiharu ; Shinada, Takuro ; Saito, Takeshi ; Sugitatsu, Atsushi ; Hatta, Tastuo
Author_Institution
Inf. Technol. R&D Center, Mitsubishi Electr. Corp., Japan
fYear
2008
fDate
14-16 Oct. 2008
Firstpage
1
Lastpage
2
Abstract
A novel design of cathode-floating bias circuit realizes 43 Gbit/s EAM-LD module with mask margin of 13%, and cooler power consumption of 0.7 W at 80°C.
Keywords
electroabsorption; semiconductor lasers; bit rate 43 Gbit/s; cathode-floating bias circuit; cooler power consumption; driver IC; electroabsorption modulator integrated laser diode; power 0.7 W; temperature 80 C; Cathodes; Circuit simulation; Distributed parameter circuits; Driver circuits; Energy consumption; Frequency; Photonic integrated circuits; Power transmission lines; Resistors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Internet, 2008. COIN 2008. 7th International Conference on
Conference_Location
Tokyo
Print_ISBN
978-4-88552-230-7
Electronic_ISBN
978-4-88552-229-1
Type
conf
Filename
4773404
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