A New Analytical Model for the Surface Electrical Field Distribution of Double RESURF LDMOS

Author

Li, Qi ; Li, Zhaoji

Author_Institution

IC Design Center, Univ. of Electron. Sci. & Technol., Chengdu

Volume

1

fYear

2006

fDate

14-16 Aug. 2006

Firstpage

1

Lastpage

4

Abstract

In this paper, a new analytical model for the surface electrical field distributions of double RESURF LDMOS is presented. Based on the 2-D Poisson solution, the model gives the influence on the surface electrical field in terms of the drain bias and structure parameters, such as the doping concentration, the depth and the position of the P-top region, the thickness and the doping concentration of the drift region and the substrate doping concentration; the dependence of breakdown voltage on the length of drift region is calculated. Further, an effectual way to gain the optimum high-voltage is also proposed. All analytical results are well verified by simulation results obtained by MEDICI and previous experimental data, showing the validity of the model presented here

Keywords

MOS integrated circuits; Poisson distribution; doping profiles; integrated circuit design; power integrated circuits; surface potential; 2-D Poisson solution; MEDICI; breakdown voltage; doping concentration; double RESURF LDMOS; drain bias; drift region; surface electrical field distribution; Analytical models; Dielectric substrates; Doping; Integrated circuit modeling; Numerical simulation; Position measurement; Semiconductor process modeling; Silicon; Tellurium; Voltage; Double RESURF; Model; Surface electrical field;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Motion Control Conference, 2006. IPEMC 2006. CES/IEEE 5th International

Conference_Location

Shanghai

Print_ISBN

1-4244-0448-7

Type

conf

DOI

10.1109/IPEMC.2006.4777951

Filename

4777951