Research on a Novel Structure of SiGeC/Si Heterojunction Power Diodes

A novel structure of p⁺(SiGeC)-n^--n⁺ power diodes is presented in this paper. On the basis of MEDICI, the physical parameter models applicable for SiGeC/Si power diodes are given and the effect on the device characteristics by incorporating smaller-sized carbon atoms substitutionally into SiGe system is simulated and analyzed. Compared to p⁺(SiGe)-n^--n ⁺ diodes the new structure not only has the merits of faster and softer reverse recovery characteristics but also reduces the reverse leakage current largely. Besides, the dependence of devices characteristics on critical thickness is also reduced largely by adding smaller-sized carbon atoms to SiGe diodes. And therefore, the SiGeC alloys are more suitable for power devices than SiGe alloys