Effective Mobility in Nano-Scaled n-MOSFETs

Author

Dai, Yue-Hua ; Chen, Jun-ning ; Ke, Dao-ming ; Sun, XJia-E

Author_Institution

Sch. of Electron. Sci. & Technol., Anhui Univ., Hefei

Volume

1

fYear

2006

fDate

14-16 Aug. 2006

Firstpage

1

Lastpage

5

Abstract

In this work, we present a methodology for calculating mobility of nano-scaled MOSFET´s from the Boltzmann transport equation (BTE). Approximate solution of the BTE for electrons in nano-scaled MOSFET´s is given, and the improved distribution function of the carriers is used to model the mobility of carriers. A new model is presented for two-dimensional characteristic field-dependent mobility. Comparing the theoretical curves with an extensive set of simulation ones has validated this model

Keywords

Boltzmann equation; MOSFET; electron mobility; nanoelectronics; semiconductor device models; BTE; Boltzmann transport equation; carrier mobility; distribution function; electrons; metal-oxide-semiconductor field effect transistor; nanoscaled n-MOSFET mobility; two-dimensional characteristic field-dependent mobility; Analytical models; Anisotropic magnetoresistance; Boltzmann equation; Distribution functions; Electron mobility; MOSFET circuits; Nanoscale devices; Scattering; Sun; Ultra large scale integration; 2D MOSFET; Boltzmann transport equation; effective electrical field; modeling of carrier mobility;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Motion Control Conference, 2006. IPEMC 2006. CES/IEEE 5th International

Conference_Location

Shanghai

Print_ISBN

1-4244-0448-7

Type

conf

DOI

10.1109/IPEMC.2006.4777976

Filename

4777976