Title :
A New Injection Efficiency Controlled GTO
Author :
Cailin, Wang ; Yong, Gao ; Ruliang, Zhang
Author_Institution :
Dept. of Electron. Eng., Xi´´an Univ. of Technol.
Abstract :
A new GTO structure called the injection efficiency controlled GTO (IEC-GTO) is proposed, and its anode injection efficiency can be controlled via an additional thin oxide layer located in short anode contact region of short anode GTO(SA-GTO). The operation mechanism is analyzed, and the conducting, blocking and switching characteristics are simulated by MEDICI simulator. The results show that injection efficiency of IEC GTO varies with the anode current, thus it has lower gate trigger current and better switching characteristic, similar the conducting and blocking characteristics than that of the conventional SA-GTO, and hardly increase the complexity of process simultaneity. Lastly, the key structural parameter of IEC-GTO is optimized, and the results show the effective width of anode region of the IEC-GTO is slight smaller than that of SA-GTO
Keywords :
commutation; power semiconductor devices; thyristor applications; GCT; IEC-GTO; MEDICI simulator; anode injection efficiency; blocking characteristics; conducting characteristics; gate commutated thyristor; gate turn-off thyristor; injection efficiency controlled GTO; ohmic contact; pn junction; power semiconductor devices; short anode contact region; switching characteristics; thin oxide layer; Analytical models; Anodes; Electrons; Equivalent circuits; Low voltage; Medical simulation; Power semiconductor devices; Power semiconductor switches; Structural engineering; Thyristors; Gate Commutated Thyristor(GCT); Gate Turn-off Thyristor (GTO); injection efficiency; ohmic contact; pn junction; power semiconductor devices; short anode;
Conference_Titel :
Power Electronics and Motion Control Conference, 2006. IPEMC 2006. CES/IEEE 5th International
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0448-7
DOI :
10.1109/IPEMC.2006.4778174
