Title :
Photonic High-Power 160-GHz Signal Generation by Using Ultrafast Photodiode and a High-Repetition-Rate Femtosecond Optical Pulse Train Generator
Author :
Jhih-Min Wun ; Hao-Yun Liu ; Cheng-Hung Lai ; Yi-Shiun Chen ; Shang-Da Yang ; Ci-Ling Pan ; Bowers, John E. ; Chen-Bin Huang ; Jin-Wei Shi
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chungli, Taiwan
Abstract :
We demonstrate photonic high-power MMW generation at subTHz (160 GHz) frequencies by using ultrafast near-ballistic unitraveling carrier photodiodes (NBUTC-PD), which have a miniaturized active area (24 μm2 ) and flip-chip bonding package for good heat-sinking. Under optical sinusoidal signal excitation with a ~85% modulation depth, 165-GHz optical-to-electrical 3-dB bandwidth, 18-mA saturation current, +5.11-dBm maximum output power at 160-GHz operating frequency has been demonstrated. In order to further mitigate device-heating, we developed a high-power pulsed optical signal source with increased optical modulation depth: a femtosecond optical short-pulse generator with extremely high repetition rate (160 GHz) and pulsewidth as short as 285 fs. With this novel source, we generated high MMW power (+7.8 dBm) with an effective 120% optical modulation depth at 160 GHz directly from the NBUTC-PD.
Keywords :
flip-chip devices; integrated optics; integrated optoelectronics; optical modulation; optical pulse generation; photodiodes; NBUTC-PD; current 18 mA; device heating; flip-chip bonding package; frequency 160 GHz; heat sinking; high-power pulsed optical signal source; high-repetition-rate femtosecond optical pulse train generator; optical modulation depth; optical sinusoidal signal excitation; optical-to-electrical bandwidth; photonic high-power signal generation; saturation current; time 285 fs; ultrafast near-ballistic unitraveling carrier photodiodes; Bandwidth; Frequency measurement; Optical modulation; Optical pulses; Photonics; Power generation; Ultrafast optics; Photodiode; ultrafast optics;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2014.2329940