Bevel Junction Termination Extension—A New Edge Termination Technique for 4H-SiC High-Voltage Devices

Author

Woongje Sung ; Huang, Alex Q. ; Baliga, B. Jayant

Author_Institution

Future Renewable Electr. Energy Delivery & Manage. Syst. Center, North Carolina State Univ., Raleigh, NC, USA

Volume

36

Issue

6

fYear

2015

fDate

Jun-15

Firstpage

594

Lastpage

596

Abstract

A new edge termination method, referred to as a bevel junction termination extension (Bevel-JTE), is presented for high-voltage silicon carbide devices. The 4H-SiC PiN rectifiers, with a breakdown voltage of 1600 V (~95% of the theoretical value), were fabricated using Bevel-JTEs. The Bevel-JTE technique significantly reduces the chip size by decreasing space occupied by edge termination while providing broad process latitude for parameter variations, such as implantation dose and activation anneal condition.

Keywords

annealing; p-i-n diodes; rectifiers; semiconductor device breakdown; silicon compounds; wide band gap semiconductors; 4H-SiC PiN rectifiers; 4H-SiC high-voltage devices; SiC; activation anneal condition; bevel junction termination extension; breakdown voltage; broad process latitude; edge termination; high-voltage silicon carbide devices; implantation dose; parameter variations; voltage 1600 V; Annealing; Blades; Implants; Junctions; Leakage currents; Silicon carbide; Voltage measurement; 4H-SiC; Bevel Dicing; Edge Termination; Edge termination; PiN diode; bevel dicing; junction termination extension (JTE);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2015.2427654

Filename

7097678