A 1.9 GHz CMOS High Isolation Absorptive OOK Modulator

Author

Chien-Chia Ling ; Hao-Shun Yang ; Jau-Horng Chen ; Chen, Yi-Jan Emery

Author_Institution

Grad. Inst. of Commun. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

25

Issue

3

fYear

2015

fDate

Mar-15

Firstpage

190

Lastpage

192

Abstract

This letter presents a high-isolation absorptive 1.9 GHz on-off keying (OOK) modulator in 90 nm CMOS process. The RF leakage-canceling technique is developed to suppress the RF leakage by combining it with its inverse replica at the output. The transform-typed baluns are used for the input and output matching such that the modulator input and output return losses change only slightly between the on and off states. The measured off-isolation of the CMOS OOK modulator is higher than 39.2 dB and the modulator has the on-state signal gain of 3.6 dB.

Keywords

CMOS integrated circuits; amplitude shift keying; modulators; CMOS high isolation absorptive OOK modulator; RF leakage-canceling technique; frequency 1.9 GHz; gain 3.6 dB; modulator input return losses; modulator output return losses; off keying modulator; size 90 nm; transform-typed baluns; CMOS integrated circuits; Impedance matching; Modulation; Ports (Computers); Radio frequency; Transistors; Wireless communication; Absorptive modulator; CMOS; leakage cancellation; on-off keying (OOK);

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2015.2391992

Filename

7029701