• DocumentCode
    48651
  • Title

    EML Based on Side-Wall Grating and Identical Epitaxial Layer Scheme

  • Author

    Hou, Liwen ; Tan, Min ; Haji, Mohsin ; Eddie, I. ; Marsh, John H.

  • Author_Institution
    School of Engineering, University of Glasgow, Glasgow, U.K.
  • Volume
    25
  • Issue
    12
  • fYear
    2013
  • fDate
    15-Jun-13
  • Firstpage
    1169
  • Lastpage
    1172
  • Abstract
    We, for the first time, present electroabsorption modulator lasers based on side-wall gratings and the identical epitaxial layer scheme using very simple fabrication processes. The devices show stable single-mode operation with little mode-hopping and a side mode suppression ratio of more than 45 dB, which is maintained until the applied current exceeds 6 times that of the threshold value. The drive voltage required to obtain a 12-dB extinction ratio is {-}{\\rm 2}~{\\rm V} . The devices can be operated with a 3-dB bandwidth of 7 GHz allowing for error-free large signal modulation at 5 Gb/s with a dynamic extinction ratio of 11 dB.
  • Keywords
    Distributed feedback (DFB) laser; electroabsorption modulator (EAM); electroabsorption modulator integrated DBF laser (EML); high extinction ratio (ER); integrated laser modulator (ILM); low drive voltage;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2013.2261809
  • Filename
    6514055