DocumentCode :
48765
Title :
Capacitive Effects of Gate on Spin-Dependent AC Transport
Author :
Yi-Jian Shi ; Jin Lan ; Wen-Quan Sui ; Xuean Zhao
Author_Institution :
Electron. Dept., Zhejiang Univ., Hangzhou, China
Volume :
50
Issue :
9
fYear :
2014
fDate :
Sept. 2014
Firstpage :
1
Lastpage :
5
Abstract :
From the spin-spin interaction, spin-capacitive term is defined in a similar way to the usual charge capacitive term that is due to the charge-charge interaction. The charge and spin capacitive effects between the gate and central channel region are found to play an important role in gate-controlled spin-dependent transport systems. Both the capacitive terms affect system´s charge and spin ac transport properties. The behaviors of conductance, density of states, and internal potentials demonstrate the strong involvement of charge and spin in electrons in spin-dependent transport. The purpose of this paper is to draw attention to the Coulomb and exchange interactions in spintronics devices.
Keywords :
electric admittance; electronic density of states; exchange interactions (electron); field effect transistors; magnetoelectronics; spin polarised transport; spin-spin interactions; Coulomb interactions; charge capacitive effects; charge-charge interaction; conductance; electron density of states; exchange interactions; gate-controlled spin-dependent transport systems; internal potentials; spin capacitive effects; spin-dependent AC transport; spin-spin interaction; spintronics devices; Admittance; Capacitance; Electric potential; Elementary particle exchange interactions; Logic gates; Magnetoelectronics; Reservoirs; AC transport; capacitive effects; exchange interaction; spintronics;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2014.2313319
Filename :
6777540
Link To Document :
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