• DocumentCode
    48765
  • Title

    Capacitive Effects of Gate on Spin-Dependent AC Transport

  • Author

    Yi-Jian Shi ; Jin Lan ; Wen-Quan Sui ; Xuean Zhao

  • Author_Institution
    Electron. Dept., Zhejiang Univ., Hangzhou, China
  • Volume
    50
  • Issue
    9
  • fYear
    2014
  • fDate
    Sept. 2014
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    From the spin-spin interaction, spin-capacitive term is defined in a similar way to the usual charge capacitive term that is due to the charge-charge interaction. The charge and spin capacitive effects between the gate and central channel region are found to play an important role in gate-controlled spin-dependent transport systems. Both the capacitive terms affect system´s charge and spin ac transport properties. The behaviors of conductance, density of states, and internal potentials demonstrate the strong involvement of charge and spin in electrons in spin-dependent transport. The purpose of this paper is to draw attention to the Coulomb and exchange interactions in spintronics devices.
  • Keywords
    electric admittance; electronic density of states; exchange interactions (electron); field effect transistors; magnetoelectronics; spin polarised transport; spin-spin interactions; Coulomb interactions; charge capacitive effects; charge-charge interaction; conductance; electron density of states; exchange interactions; gate-controlled spin-dependent transport systems; internal potentials; spin capacitive effects; spin-dependent AC transport; spin-spin interaction; spintronics devices; Admittance; Capacitance; Electric potential; Elementary particle exchange interactions; Logic gates; Magnetoelectronics; Reservoirs; AC transport; capacitive effects; exchange interaction; spintronics;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.2014.2313319
  • Filename
    6777540