DocumentCode
489218
Title
Development of an Improved Fundamental Model for the Multiwafer LPCVD Reactor
Author
Badgwell, Thomas A. ; Edgar, Thomas F. ; Trachtenberg, Isaac ; Elliott, J.Kiefer
Author_Institution
Department of Chemical Engineering, The University of Texas at Austin, Austin, Texas 78712
fYear
1991
fDate
26-28 June 1991
Firstpage
2858
Lastpage
2865
Abstract
A new fundamental model for the multiwafer LPCVD reactor has been developed. The model allows for a multicomponent mass transport description with multiple homogeneous and heterogeneous reactions. The modeled geometry includes reactor inlet and outlet sections, as well as downstream injectors. Model predictions for polysilicon deposition are compared with experimental data from two widely differing reactors. It is shown that model predictions can be improved by assuming axial and radial thermal variations within the reactor.
Keywords
Chemical engineering; Chemical vapor deposition; Equations; Geometry; Inductors; Integrated circuit manufacture; Predictive models; Semiconductor device modeling; Solid modeling; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
American Control Conference, 1991
Conference_Location
Boston, MA, USA
Print_ISBN
0-87942-565-2
Type
conf
Filename
4791928
Link To Document