• DocumentCode
    489218
  • Title

    Development of an Improved Fundamental Model for the Multiwafer LPCVD Reactor

  • Author

    Badgwell, Thomas A. ; Edgar, Thomas F. ; Trachtenberg, Isaac ; Elliott, J.Kiefer

  • Author_Institution
    Department of Chemical Engineering, The University of Texas at Austin, Austin, Texas 78712
  • fYear
    1991
  • fDate
    26-28 June 1991
  • Firstpage
    2858
  • Lastpage
    2865
  • Abstract
    A new fundamental model for the multiwafer LPCVD reactor has been developed. The model allows for a multicomponent mass transport description with multiple homogeneous and heterogeneous reactions. The modeled geometry includes reactor inlet and outlet sections, as well as downstream injectors. Model predictions for polysilicon deposition are compared with experimental data from two widely differing reactors. It is shown that model predictions can be improved by assuming axial and radial thermal variations within the reactor.
  • Keywords
    Chemical engineering; Chemical vapor deposition; Equations; Geometry; Inductors; Integrated circuit manufacture; Predictive models; Semiconductor device modeling; Solid modeling; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    American Control Conference, 1991
  • Conference_Location
    Boston, MA, USA
  • Print_ISBN
    0-87942-565-2
  • Type

    conf

  • Filename
    4791928