DocumentCode :
489218
Title :
Development of an Improved Fundamental Model for the Multiwafer LPCVD Reactor
Author :
Badgwell, Thomas A. ; Edgar, Thomas F. ; Trachtenberg, Isaac ; Elliott, J.Kiefer
Author_Institution :
Department of Chemical Engineering, The University of Texas at Austin, Austin, Texas 78712
fYear :
1991
fDate :
26-28 June 1991
Firstpage :
2858
Lastpage :
2865
Abstract :
A new fundamental model for the multiwafer LPCVD reactor has been developed. The model allows for a multicomponent mass transport description with multiple homogeneous and heterogeneous reactions. The modeled geometry includes reactor inlet and outlet sections, as well as downstream injectors. Model predictions for polysilicon deposition are compared with experimental data from two widely differing reactors. It is shown that model predictions can be improved by assuming axial and radial thermal variations within the reactor.
Keywords :
Chemical engineering; Chemical vapor deposition; Equations; Geometry; Inductors; Integrated circuit manufacture; Predictive models; Semiconductor device modeling; Solid modeling; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
American Control Conference, 1991
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-87942-565-2
Type :
conf
Filename :
4791928
Link To Document :
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