Total-Ionizing-Dose Induced Coupling Effect in the 130-nm PDSOI I/O nMOSFETs

Author

Chao Peng ; Zhiyuan Hu ; Bingxu Ning ; Huixiang Huang ; Zhengxuan Zhang ; Dawei Bi ; Yunfei En ; Shichang Zou

Author_Institution

State Key Lab. of Functional Mater. for Inf., Shanghai Inst. of Microsyst. & Inf. Technol., Shanghai, China

Volume

35

Issue

5

fYear

2014

fDate

May-14

Firstpage

503

Lastpage

505

Abstract

The tolerance of partially depleted (PD) silicon-on-insulator nMOSFETs to total-ionizing-dose-induced trapped charge in the buried oxide is investigated. The radiation-induced coupling effect due to the metamorphosis of PD device into a fully depleted one is observed. The coupling effect is responsible for the negative threshold voltage shift, enhanced drain-induced barrier lowering effect, subthreshold slope increase, and transconductance variation in the front channel device. The back channel implantation is introduced as an effective way to suppress the radiation-induced coupling effect.

Keywords

MOSFET; radiation hardening (electronics); silicon-on-insulator; PD device metamorphosis; PDSOI I-O nMOSFET; Si; back channel implantation; buried oxide; enhanced drain-induced barrier lowering effect; front channel device; negative threshold voltage shift; partially depleted silicon-on-insulator nMOSFET; radiation-induced coupling effect; size 130 nm; subthreshold slope increase; total-ionizing-dose-induced coupling effect; total-ionizing-dose-induced trapped charge; transconductance variation; Couplings; Doping; Logic gates; MOSFET; Radiation effects; Silicon; Threshold voltage; Coupling effect; partially-depleted (PD); silicon-on-insulator (SOI); total-ionizing-dose (TID); trapped charge; trapped charge.;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2014.2311453

Filename

6777557