Title :
Field Effect Mobility Model in Oxide Semiconductor Thin Film Transistors With Arbitrary Energy Distribution of Traps
Author :
Ling Li ; Nianduan Lu ; Ming Liu
Author_Institution :
Lab. of Nanofabrication & Novel Devices Integrated Technol., Inst. of Microelectron., Beijing, China
Abstract :
The field effect mobility in an oxide thin film transistor (TFT) is studied theoretically. Based on a multiple-trapping and release model, a unified expression for field effect mobility is formulated for oxide TFTs. This model can well explain the temperature and gate voltage dependent mobility observed in oxide TFT. The effect of localized states distribution on the field effect mobility is also demonstrated.
Keywords :
localised states; semiconductor device models; semiconductor materials; thin film transistors; TFT; arbitrary energy distribution; field effect mobility; gate voltage; localized states distribution; multiple trapping; oxide semiconductor; release model; thin film transistor; Conductivity; Logic gates; Semiconductor device modeling; Temperature; Temperature dependence; Thin film transistors; Oxide thin film transistor; field effect mobility; multiple-trapping and release theory;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2013.2291782
