A Buried Ridge Stripe Structure InGaAsP-Si Hybrid Laser

Author

Lijun Yuan ; Li Tao ; Weixi Chen ; Yanping Li ; Dan Lu ; Song Liang ; Hongyan Yu ; Guangzhao Ran ; Jiaoqing Pan ; Wei Wang

Author_Institution

Key Lab. of Semicond. Mater. Sci., Inst. of Semicond., Beijing, China

Volume

27

Issue

4

fYear

2015

fDate

Feb.15, 15 2015

Firstpage

352

Lastpage

355

Abstract

A buried ridge stripe (BRS) structure InGaAsP-Si hybrid laser based on selective area metal bonding (SAMB) method is demonstrated. This novel hybrid laser structure combines the SAMB method´s advantage of low bonding requirements and great flexibility and the BRS lasers´ low threshold, high thermal performance, and good optical field and carrier confinement. The 300-$mu $ m-long hybrid laser has a threshold current of 14 mA and a maximum single-facet output power of 5.4 mW at room temperature, with a slope efficiency of 0.17 W/A. The laser has a characteristic temperature of 50 K, with continuous wave operation at temperature >50 °C.

Keywords

III-V semiconductors; elemental semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; quantum well lasers; silicon; InGaAsP-Si; buried ridge stripe structure hybrid laser; carrier confinement; continuous wave operation; current 14 mA; optical field; power 5.4 mW; selective area metal bonding method; single-facet output power; slope efficiency; temperature 293 K to 298 K; temperature 50 K; thermal performance; threshold current; wavelength 300 mum; Bonding; Lasers; Metals; Optical waveguides; Silicon; Temperature; Waveguide lasers; Hybrid laser; buried ridge stripe (BRS) structure; hybrid laser; selective area metal bonding (SAMB) method;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2014.2372892

Filename

6963292