Assessment of the Impact of Inelastic Tunneling on the Frequency-Depth Conversion from Low-Frequency Noise Spectra

Author

Simoen, Eddy ; Jae Woo Lee ; Claeys, Cor

Author_Institution

Imec, Leuven, Belgium

Volume

61

Issue

2

fYear

2014

fDate

Feb. 2014

Firstpage

634

Lastpage

637

Abstract

An expression is derived for the conversion of the frequency axis of a low-frequency noise spectrum into a depth axis, based on the capture and emission time constant of a random telegraph signal. By connecting the corner frequency of the corresponding Lorentzian spectrum to the measured trapping time constant, the effect of multiphonon relaxation upon tunneling into an oxide trap can be included in a natural way. With this expression, one can derive in a straightforward manner some important trends with respect to the impact of several trap and material parameters on the tunneling depth, both for SiO₂ and high- κ gate dielectrics.

Keywords

high-k dielectric thin films; hole traps; multiphoton processes; particle traps; silicon compounds; telegraphy; tunnelling; Lorentzian spectrum; SiO₂; capture time constant; corner frequency; depth axis; emission time constant; frequency axis conversion; frequency-depth conversion; high- κ gate dielectrics; inelastic tunneling; low-frequency noise spectrum; material parameters; multiphonon relaxation; oxide trap; random telegraph signal; trapping time constant; Dielectrics; Electron traps; Logic gates; Noise; Silicon; Tunneling; $1/f$ noise; border traps; inelastic tunneling; random telegraph signal (RTS);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2013.2295025

Filename

6702481