DocumentCode :
49051
Title :
Transient Off-Current in Junctionless FETs
Author :
Barbut, Lucian ; Jazaeri, Farzan ; Bouvet, D. ; Sallese, Jean-Michel
Author_Institution :
Swiss Fed. Inst. of Technol. in Lausanne (Ecole Polytech. Fed. de Lausanne), Lausanne, Switzerland
Volume :
60
Issue :
6
fYear :
2013
fDate :
Jun-13
Firstpage :
2080
Lastpage :
2083
Abstract :
We report preliminary measurements of transient drain current undershoot with time constants of the order of milliseconds in thick and highly doped n-type junctionless field-effect transistors. This effect might be attributed to a process involving generation of holes in the n-type-doped channel, which can also explain the partial channel depletion as consequence of channel screening by an inversion layer, thus impeding the device to be switched off. The approach described in this work could also be used for characterization of silicon channels in junctionless nanowires.
Keywords :
field effect transistors; transients; highly doped n-type junctionless field effect transistor; hole generation; junctionless FET; junctionless nanowire; partial channel depletion; transient drain current undershoot; transient off-current; CMOS; double gate; junctionless; nanowire; off-current; transient;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2013.2257788
Filename :
6514092
Link To Document :
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