• DocumentCode
    49071
  • Title

    Regulated Common-Gate Transimpedance Amplifier Designed to Operate With a Silicon Photo-Multiplier at the Input

  • Author

    De Medeiros Silva, Manuel ; Oliveira, Leonardo B.

  • Author_Institution
    INESC-ID Lisboa, Lisbon, Portugal
  • Volume
    61
  • Issue
    3
  • fYear
    2014
  • fDate
    Mar-14
  • Firstpage
    725
  • Lastpage
    735
  • Abstract
    A transimpedance amplifier (TIA) in the front-end of a radiation detector is required to convert the current pulse produced by a light-detector to a voltage pulse with amplitude and shape suitable for the subsequent processing. We consider in this paper the specifications of a positron emission tomography (PET) scanner for medical imaging. The conventional approach is to use an avalanche photo-diode (APD) as the light-detector and a feedback TIA. We point out here that, when the APD is replaced by the more recent silicon photomultiplier (SiPM), a feedback TIA is not suitable, and we propose the use of a regulated common-gate (RC-G) TIA. We derive the transimpedance function of the RC-G TIA considering the parasitic capacitances that have a dominant effect on the pulse shaping. We use the result obtained to establish TIA design guidelines, and we show that these should be different with an APD and with a SiPM at the input. We identify the dominant noise source in the RC-G TIA, and we derive a closed form equation for the output noise rms voltage. A prototype TIA was designed for UMC 130 nm CMOS technology. We present simulation and experimental results that confirm that the RC-G circuit is suitable for implementation of the TIAs in the front-end of a PET scanner using SiPMs at the input.
  • Keywords
    CMOS integrated circuits; avalanche photodiodes; biomedical imaging; elemental semiconductors; operational amplifiers; photomultipliers; positron emission tomography; pulse shaping; silicon; APD; PET scanner; RC-G TIA; RC-G circuit; Si; SiPM; UMC CMOS technology; avalanche photodiode; light detector; medical imaging; noise source; parasitic capacitances; positron emission tomography scanner; pulse shaping; radiation detector; regulated common-gate transimpedance amplifier; silicon photomultiplier; size 130 nm; transimpedance function; voltage pulse; Approximation methods; Capacitance; Equations; Mathematical model; Noise; Positron emission tomography; Silicon; Amplifiers; noise analysis; positron emission tomography; radiation detectors; silicon photo-multiplier; transimpedance amplifiers;
  • fLanguage
    English
  • Journal_Title
    Circuits and Systems I: Regular Papers, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1549-8328
  • Type

    jour

  • DOI
    10.1109/TCSI.2013.2283992
  • Filename
    6630131