DocumentCode :
49071
Title :
Regulated Common-Gate Transimpedance Amplifier Designed to Operate With a Silicon Photo-Multiplier at the Input
Author :
De Medeiros Silva, Manuel ; Oliveira, Leonardo B.
Author_Institution :
INESC-ID Lisboa, Lisbon, Portugal
Volume :
61
Issue :
3
fYear :
2014
fDate :
Mar-14
Firstpage :
725
Lastpage :
735
Abstract :
A transimpedance amplifier (TIA) in the front-end of a radiation detector is required to convert the current pulse produced by a light-detector to a voltage pulse with amplitude and shape suitable for the subsequent processing. We consider in this paper the specifications of a positron emission tomography (PET) scanner for medical imaging. The conventional approach is to use an avalanche photo-diode (APD) as the light-detector and a feedback TIA. We point out here that, when the APD is replaced by the more recent silicon photomultiplier (SiPM), a feedback TIA is not suitable, and we propose the use of a regulated common-gate (RC-G) TIA. We derive the transimpedance function of the RC-G TIA considering the parasitic capacitances that have a dominant effect on the pulse shaping. We use the result obtained to establish TIA design guidelines, and we show that these should be different with an APD and with a SiPM at the input. We identify the dominant noise source in the RC-G TIA, and we derive a closed form equation for the output noise rms voltage. A prototype TIA was designed for UMC 130 nm CMOS technology. We present simulation and experimental results that confirm that the RC-G circuit is suitable for implementation of the TIAs in the front-end of a PET scanner using SiPMs at the input.
Keywords :
CMOS integrated circuits; avalanche photodiodes; biomedical imaging; elemental semiconductors; operational amplifiers; photomultipliers; positron emission tomography; pulse shaping; silicon; APD; PET scanner; RC-G TIA; RC-G circuit; Si; SiPM; UMC CMOS technology; avalanche photodiode; light detector; medical imaging; noise source; parasitic capacitances; positron emission tomography scanner; pulse shaping; radiation detector; regulated common-gate transimpedance amplifier; silicon photomultiplier; size 130 nm; transimpedance function; voltage pulse; Approximation methods; Capacitance; Equations; Mathematical model; Noise; Positron emission tomography; Silicon; Amplifiers; noise analysis; positron emission tomography; radiation detectors; silicon photo-multiplier; transimpedance amplifiers;
fLanguage :
English
Journal_Title :
Circuits and Systems I: Regular Papers, IEEE Transactions on
Publisher :
ieee
ISSN :
1549-8328
Type :
jour
DOI :
10.1109/TCSI.2013.2283992
Filename :
6630131
Link To Document :
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