DocumentCode :
490786
Title :
Characterization and Improvement of Power MOSFET Switching Loss
Author :
Okabe, T. ; Katsueda, M. ; Yoshida, I. ; Iijima, T. ; Ohtaka, S.
Author_Institution :
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo
fYear :
1983
fDate :
18-21 Oct. 1983
Firstpage :
508
Lastpage :
513
Abstract :
A model to evaluate power MOSFET switching loss is developed. Frequency dependencies are measured using a one-transistor forward converter and compared with calculated ones. For comparison, maximum output powers are measured both for power MOSFETs and bipolar transistors. To reduce the switching loss and enable a faster switching a small feedback capacitance device is proposed and realized.
Keywords :
Bipolar transistors; Capacitance; Feedback; Frequency conversion; Frequency measurement; MOSFET circuits; Power MOSFET; Power generation; Power measurement; Switching loss;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Telecommunications Energy Conference, 1983. INTELEC '83. Fifth International
Conference_Location :
Tokyo, Japan
Type :
conf
Filename :
4793869
Link To Document :
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