• DocumentCode
    490786
  • Title

    Characterization and Improvement of Power MOSFET Switching Loss

  • Author

    Okabe, T. ; Katsueda, M. ; Yoshida, I. ; Iijima, T. ; Ohtaka, S.

  • Author_Institution
    Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo
  • fYear
    1983
  • fDate
    18-21 Oct. 1983
  • Firstpage
    508
  • Lastpage
    513
  • Abstract
    A model to evaluate power MOSFET switching loss is developed. Frequency dependencies are measured using a one-transistor forward converter and compared with calculated ones. For comparison, maximum output powers are measured both for power MOSFETs and bipolar transistors. To reduce the switching loss and enable a faster switching a small feedback capacitance device is proposed and realized.
  • Keywords
    Bipolar transistors; Capacitance; Feedback; Frequency conversion; Frequency measurement; MOSFET circuits; Power MOSFET; Power generation; Power measurement; Switching loss;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Telecommunications Energy Conference, 1983. INTELEC '83. Fifth International
  • Conference_Location
    Tokyo, Japan
  • Type

    conf

  • Filename
    4793869
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=490786