DocumentCode
491003
Title
Transmitters using Power Amplifiers
Author
Goel, J. ; Yuan, S.
Author_Institution
TRW Electronic Systems Group, One Space Park, Redondo Beach, CA 90278
Volume
1
fYear
1984
fDate
21-24 Oct. 1984
Firstpage
161
Lastpage
166
Abstract
TWT amplifiers have traditionally been used for microwave communications links requiring high power amplifiers. The mean-time-before-failure (MTBF) of traveling wave tube amplifiers (TWTAs) is low compared to solid state power amplifiers and generally limits the communication system performance. The frequency and power capabilities of solid state amplifiers using FETs and IMPATT devices have been advancing rapidly in recent years. Transmitters with higher than 20-W output power and reasonably high power added efficiency are possible at Ka-band due to recent device improvements. Computer simulation results also indicate that FETs can deliver more linear power than a conventional TWT. An important advantage of SSPAs is the reliability of the device itself. This aspect will be discussed in detail. Theoretical calculations show that 30% power added efficiency at the device level can be achieved at Ka-band with state-of-the-art material and fabrication technologies. Some proposed approaches to improve the frequency, power, and efficiency achievable with FET SSPAs in the near future will be discussed.
Keywords
Communication systems; FETs; Frequency; High power amplifiers; Microwave amplifiers; Microwave communication; Power amplifiers; Power generation; Solid state circuits; Transmitters;
fLanguage
English
Publisher
ieee
Conference_Titel
Military Communications Conference, 1984. MILCOM 1984. IEEE
Conference_Location
Los Angeles, CA, USA
Type
conf
DOI
10.1109/MILCOM.1984.4794856
Filename
4794856
Link To Document