DocumentCode :
491457
Title :
First Demonstration of 10 Gb/s Direct Modulation with a Buried Ridge Distributed Feedback Laser based on Quantum Dash InAs/InP Material at 1.55 μm
Author :
Dagens, B. ; Make, D. ; le Gouezigou, O. ; Provost, J.G. ; Lelarge, F. ; Accard, A. ; Poingt, F. ; Landreau, J. ; Drisse, O. ; Derouin, E. ; Pommereau, F. ; Duan, G-H.
Author_Institution :
Alcatel Thales III-V Lab, Route de Nozay, 91460 Marcoussis, France Email: Beatrice.dagens@3-5lab.fr
fYear :
2006
fDate :
24-28 Sept. 2006
Firstpage :
1
Lastpage :
2
Abstract :
Buried ridge distributed feedback lasers operating at 1.55 μm wavelength range are fabricated based on dashes-in-the-well InAs/InP. The first floor free 10 Gb/s direct modulation is demonstrated for back-to-back and an accumulated dispersion of 100 ps/nm.
Keywords :
Distributed feedback devices; Etching; Indium phosphide; Laser feedback; Laser modes; Optical materials; Quantum dot lasers; Quantum dots; Quantum well lasers; Semiconductor lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Communications, 2006. ECOC 2006. European Conference on
Conference_Location :
Cannes, France
Print_ISBN :
978-2-912328-39-7
Electronic_ISBN :
978-2-912328-39-7
Type :
conf
DOI :
10.1109/ECOC.2006.4800878
Filename :
4800878
Link To Document :
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