Compensating Pixel Circuit Driving AMOLED Display With a-IGZO TFTs

Author

Chih-Lung Lin ; Wen-Yen Chang ; Chia-Che Hung

Author_Institution

Dept. of Electr. Eng. & the Adv. Optoelectron. Technol. Center, Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

34

Issue

9

fYear

2013

fDate

Sept. 2013

Firstpage

1166

Lastpage

1168

Abstract

This letter presents a novel active-matrix organic light-emitting diode (AMOLED) pixel circuit that uses amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with a bottom-gate structure to compensate for the threshold voltage shift of the TFT. An a-IGZO TFT driven AMOLED display (70 × 70 pixels) on a glass substrate is fabricated and its reliability is evaluated under electrical stress.

Keywords

LED displays; amorphous semiconductors; gallium compounds; glass; indium compounds; organic light emitting diodes; organic semiconductors; semiconductor device reliability; stress effects; thin film transistors; zinc compounds; AMOLED display; AMOLED pixel circuit; a-IGZO TFT; a-IGZO thin-film transistors; active-matrix organic light-emitting diode pixel circuit; amorphous indium-gallium-zinc oxide; bottom-gate structure; electrical stress; glass substrate; reliability; threshold voltage shift; Active matrix organic light emitting diodes; Arrays; Degradation; Thin film transistors; Threshold voltage; Active-matrix organic light-emitting diode (AMOLED); amorphous indium–gallium–zinc oxide (a-IGZO); thin-film transistor (TFT);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2271783

Filename

6563159