DocumentCode :
491674
Title :
A 1.2-V 10-Gb/s Highly CPD isolated and bandwidth enhanced optical receiver in 0.13-μm CMOS technology
Author :
Oh, W.S. ; Park, K. ; Min, K.W. ; Son, H.S. ; Lee, Y.S.
Author_Institution :
Hybrid Signal Process. Res. Center, Korea Electron. Technol. Inst., Seongnam
Volume :
03
fYear :
2009
fDate :
15-18 Feb. 2009
Firstpage :
1586
Lastpage :
1590
Abstract :
To highly isolate inherent parasitic capacitance (CPD) of photodiode, second-order passive LC-ladder network is exploited. And to enhance the bandwidth, various techniques, such as capacitive degeneration, inductive peaking, active feedback, and negative impedance compensation, are applied. In this paper, a 1.2-V 10-Gb/s optical receiver is designed in 0.13-mum CMOS technology. The proposed optical receiver achieves ~8.2-GHz of bandwidth for 0.25-pF of CPD and ~6.9-GHz of bandwidth for 1-pF of CPD for 10-Gb/s operation.
Keywords :
CMOS integrated circuits; optical receivers; photodiodes; CMOS technology; active feedback; capacitive degeneration; inductive peaking; isolate inherent parasitic capacitance; negative impedance compensation; optical receiver; photodiode; second-order passive LC-ladder network; Bandwidth; CMOS technology; Isolation technology; Optical amplifiers; Optical design; Optical noise; Optical receivers; Parasitic capacitance; Photodiodes; Semiconductor optical amplifiers; CMOS; LC-ladder network; optical receiver; post amplifier; pre amplifier;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Communication Technology, 2009. ICACT 2009. 11th International Conference on
Conference_Location :
Phoenix Park
ISSN :
1738-9445
Print_ISBN :
978-89-5519-138-7
Electronic_ISBN :
1738-9445
Type :
conf
Filename :
4809376
Link To Document :
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