DFM optimization of standard cells considering random and systematic defect

In this study, we implemented an auto-correction method for layout of 45 nm standard cells to get design-for-manufacturability (DFM) friendly design. The proposed method avoids lithography hotspot and particle defect, which are the source of systematic and random variation, by utilizing litho simulation and critical area analysis during optimization. In addition, to achieve maximum benefit of standard cell optimization, most of the recommended rules (RR) are applied to the standard cells. To assure the consistency of the optimization result, priority was given for each rule and the optimization is performed based on the priority. Using the proposed method, optimization time decreased tremendously compared to manual correction; therefore, the proposed layout optimization can handle thousands of standard cells with reasonable runtime. Verification results with manufacturing checking deck showed that DFM-friendly index improved by over 4.3% on optimized cells when compared to the original cells.