Title :
Millimeter-wave CMOS power amplifiers in common-source MOSFETs
Author :
Hwang, Sang-Hyun ; Lee, Seong-Gwon ; Lee, Jong-Wook ; Kim, Byung-Sung
Author_Institution :
Sch. of Electron. & Inf., Kyung Hee Univ., Suwon
Abstract :
In this paper, CMOS millimeter-wave power amplifiers operating at Q-band (40 GHz) and Ka-band (27 GHz) are presented. The Q-band amplifier was designed using 0.13 mum standard CMOS process having 6 layers of copper metallization, and the amplifier resulted in a small-signal gain of 9.3 dB at 40 GHz when biased at IDS = 53 mA and VDS = 1.5 V. The Ka-band amplifier was design using 0.18 mum RF CMOS process. The amplifier showed a small-signal gain of 14.5 dB at 27 GHz when biased at IDS = 94 mA and VDS = 1.8 V. The results show the potential of CMOS millimeter-wave system-on-chip (SoC) at frequencies greater than 20 GHz.
Keywords :
CMOS integrated circuits; copper; integrated circuit metallisation; millimetre wave power amplifiers; system-on-chip; Ka-band amplifier; Q-band amplifier; common-source MOSFETs; copper metallization; frequency 27 GHz; frequency 40 GHz; millimeter-wave CMOS power amplifiers; size 0.13 mum; size 0.18 mum; system-on-chip; CMOS technology; Frequency; Intrusion detection; MOSFETs; Millimeter wave communication; Millimeter wave radar; Millimeter wave technology; Millimeter wave transistors; Power amplifiers; Radiofrequency amplifiers; CMOS; millimeter-wave; power amplifier; substrate-shield-line;
Conference_Titel :
SoC Design Conference, 2008. ISOCC '08. International
Conference_Location :
Busan
Print_ISBN :
978-1-4244-2598-3
Electronic_ISBN :
978-1-4244-2599-0
DOI :
10.1109/SOCDC.2008.4815657
