DocumentCode :
493287
Title :
Silicon microfluidic channels and microstructures in single photolithography step
Author :
Pal, Prem ; Sato, Kazuo
Author_Institution :
Dept. of Micro-Nano Syst. Eng., Nagoya Univ., Nagoya
fYear :
2009
fDate :
1-3 April 2009
Firstpage :
419
Lastpage :
423
Abstract :
In this paper, a fabrication method of suspended silicon microfluidic channels and various shapes of microstructures of desired thickness in (100)-Si wafers using single photolithography step is presented. The fabrication method uses wafer bonding with silicon nitride (Si3N4) as intermediate layer, local oxidation of silicon (LOCOS), and complementary metal oxide semiconductor (CMOS) process compatible wet anisotropic etching. The etching process is performed in two steps in non-ionic surfactant Triton-X-100 [C14H22O(C2H4O)n] added and pure tetramethyl ammonium hydroxide (TMAH) solutions. The surfactant added TMAH is used to define the shape of the structures, whereas pure TMAH is employed for their release.
Keywords :
CMOS integrated circuits; elemental semiconductors; etching; microfabrication; microfluidics; organic compounds; oxidation; photolithography; silicon; silicon compounds; surfactants; wafer bonding; (100)-silicon wafers; Si-Si3N4; complementary metal oxide semiconductor process; intermediate layer; local oxidation; microstructures; nonionic surfactant Triton-X-100; photolithography step; silicon microfluidic channels; silicon nitride; tetramethyl ammonium hydroxide solutions; wafer bonding; wet anisotropic etching; Anisotropic magnetoresistance; CMOS process; Fabrication; Lithography; Microfluidics; Microstructure; Oxidation; Shape; Silicon; Wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Design, Test, Integration & Packaging of MEMS/MOEMS, 2009. MEMS/MOEMS '09. Symposium on
Conference_Location :
Rome
Print_ISBN :
978-1-4244-3874-7
Type :
conf
Filename :
4919491
Link To Document :
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