Interlaboratory Study of Eddy-Current Measurement of Excess-Carrier Recombination Lifetime

Author

Blum, Adrienne L. ; Swirhun, James S. ; Sinton, Ronald A. ; Fei Yan ; Herasimenka, Stanislau ; Roth, T. ; Lauer, K. ; Haunschild, Jonas ; Lim, B. ; Bothe, Klaus ; Hameiri, Ziv ; Seipel, Bjoern ; Rentian Xiong ; Dhamrin, Marwan ; Murphy, John D.

Author_Institution

Sinton Instrum., Boulder, CO, USA

Volume

4

Issue

1

fYear

2014

fDate

Jan. 2014

Firstpage

525

Lastpage

531

Abstract

Excess-carrier recombination lifetime is a key parameter in silicon solar cell design and production. With the vast international use and recent standardization (SEMI PV13) of eddy-current wafer and brick silicon lifetime test instruments, it is important to quantify the inter- and intralaboratory repeatability. This paper presents the results of an international interlaboratory study conducted with 24 participants to determine the precision of the SEMI PV13 eddy-current carrier lifetime measurement test method. Overall, the carrier recombination lifetime between-laboratory reproducibility was found to be within ±11% for the quasi-steady-state mode and ±8% for transient mode for wafer samples, and within ±4% for bulk samples.

Keywords

carrier lifetime; eddy current testing; elemental semiconductors; silicon; solar cells; standardisation; SEMI PV13 eddy-current carrier lifetime measurement; Si; brick silicon lifetime test; eddy-current wafer; excess-carrier recombination lifetime; interlaboratory repeatability; intralaboratory repeatability; quasisteady-state mode; silicon solar cell design; standardization; transient mode; Atmospheric measurements; Electrical resistance measurement; Instruments; Laboratories; Particle measurements; Standards; Transient analysis; Charge carrier lifetime; eddy currents; photoconductivity; silicon;

fLanguage

English

Journal_Title

Photovoltaics, IEEE Journal of

Publisher

ieee

ISSN

2156-3381

Type

jour

DOI

10.1109/JPHOTOV.2013.2284375

Filename

6631475