Scintillation Characteristics of Indium Doped Cesium Iodide Single Crystal

Author

Yuntao Wu ; Guohao Ren ; Fang Meng ; Xiaofeng Chen ; Dongzhou Ding ; Huanyin Li ; Shangke Pan ; Melcher, Charles L.

Author_Institution

Dept. of Mater. Sci. & Eng., Univ. of Tennessee, Knoxville, TN, USA

Volume

62

Issue

2

fYear

2015

fDate

Apr-15

Firstpage

571

Lastpage

576

Abstract

Indium doped cesium iodide (CsI:In) single crystals were grown by the Bridgman method. A comparison study of the scintillation properties of our CsI:In and commercially available CsI:Tl single crystals was carried out, including scintillation decay time, energy resolution, non-proportionality, absolute light yield, and afterglow. Under X-ray excitation, the CsI:In emission corresponds to a symmetrical broad band centered at 545 nm. Its scintillation decay time is 1.99 ±0.02 μs at room temperature under ¹³⁷Csγ-ray excitation. The CsI:In light yield was found to be 34,700 ±1735 photons per MeV with an energy resolution of 9.1 ±0.3%, based on the pulse height spectra under ¹³⁷Cs excitation. The afterglow level of CsI:In over 130 ms after pulsed X-ray excitation was two orders of magnitude higher than that of CsI:Tl.

Keywords

afterglows; caesium compounds; crystal growth from melt; doping; indium; scintillation; solid scintillation detectors; ¹³⁷Csγ-ray excitation; Bridgman method; CsI:In; CsI:In emission; CsI:Tl; absolute light yield; afterglow level; energy resolution; indium doped cesium iodide; nonproportionality; pulse height spectra; pulsed X-ray excitation; scintillation characteristics; scintillation decay time; scintillation properties; single crystal; symmetrical broad band; Crystals; Energy measurement; Energy resolution; Ions; Luminescence; Photonics; Temperature measurement; Afterglow; CsI:In; energy resolution; non-proportionality;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2015.2412523

Filename

7070775