79GHz integrated antenna on low resistivity Si BiCMOS exploiting above-IC processing

Author

Pinto, Y. ; Person, C. ; Gloria, D. ; Cathelin, A. ; Belot, D. ; Pruvost, S. ; Plana, R.

Author_Institution

Lab.-STICC, TELECOM Bretagne, Brest

fYear

2009

fDate

23-27 March 2009

Firstpage

3539

Lastpage

3543

Abstract

This paper analyses the antenna implementation on BiCMOS technology. A dipole antenna, working at 79 GHz, is implemented and manufactured. The radiation simulated results reveal low gain (-6.8 dBi with IE3D and -8.5 with FEKO) and low radiation efficiency (8.9% with IE3D, 10.39% with FEKO), as expected. Classical techniques to optimise these performances require complex fabrication process. An alternative solution based on ldquomaskingrdquo technique is presented offering low cost and good performance advantages. In this way, +2.65 dBi of gain and 37% of radiation efficiency are obtained with an antenna implemented on BiCMOS technology with post-IC processing.

Keywords

BiCMOS integrated circuits; antenna radiation patterns; dipole antennas; elemental semiconductors; millimetre wave antennas; silicon; Si; complex fabrication process; dipole antenna; frequency 79 GHz; integrated antenna; integrated circuit processing; low radiation efficiency; low resistivity BiCMOS; masking technique; post-IC processing; BiCMOS integrated circuits; Conductivity; Dielectric substrates; Frequency; Loaded antennas; Microstrip antennas; Prototypes; Testing; Ultra wideband antennas; Ultra wideband technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Antennas and Propagation, 2009. EuCAP 2009. 3rd European Conference on

Conference_Location

Berlin

Print_ISBN

978-1-4244-4753-4

Electronic_ISBN

978-3-00-024573-2

Type

conf

Filename

5068358