DocumentCode
494522
Title
Simulation and experiment of PDMS based thermopnuematic microvalve in microfluidic chip
Author
Mongpraneet, Suriya ; Wisitsora-at, Anurat ; Kamnerdtong, Thoatsanope ; Jongpardist, Pattaramon ; Tuantranont, Adison
Author_Institution
Dept. of Mech. Eng., King Mongkut´´s Univ. of Technol., Bangkok, Thailand
Volume
01
fYear
2009
fDate
6-9 May 2009
Firstpage
458
Lastpage
461
Abstract
A thermopneumatic microvalve for switching fluid in a microchannel of PDMS based microfluidic chip was designed and fabricated from multi-stack PDMS structure on a glass substrate. Microvalve structure consists of inlet and outlet, microchannel, a thermopneumatic actuation chamber, and a thin film heater. In microchannel, fluid is blocked or passed by the motion of actuation diaphragm. Actuation diaphragm is bent up and down by exploiting air expansion that is induced by increasing heater temperature. The microvalve was designed and simulated by ABQUS program, mechanical commercial finite element simulation software, to predict its characteristics and optimize the design. The microvalve created for simulation model has a diameter of 2.5 mm and a total height of 450 mum. The microvalve was then fabricated on glass substrate by low cost processes including PDMS spinning, oxygen plasma bonding, electroplated micromasking, and thermal evaporation. The microvalve characteristics were measured as a function of applied voltage and inlet pressure. From the experiment, a maximum inlet pressure of 10 kPa can be applied with 7-17 V applied voltage to the microvalve heater. The leak rate and maximum inlet pressure results obtained from ABQUS program agree well with the experimental data.
Keywords
microchannel flow; microfluidics; microvalves; pneumatic systems; PDMS; actuation diaphragm; microchannel; microfluidic chip; oxygen plasma bonding; polydimethylsiloxane; switching fluid; thermopnuematic microvalve; Glass; Microchannel; Microfluidics; Microvalves; Plasma measurements; Plasma temperature; Predictive models; Substrates; Transistors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology, 2009. ECTI-CON 2009. 6th International Conference on
Conference_Location
Pattaya, Chonburi
Print_ISBN
978-1-4244-3387-2
Electronic_ISBN
978-1-4244-3388-9
Type
conf
DOI
10.1109/ECTICON.2009.5137047
Filename
5137047
Link To Document