DocumentCode
496456
Title
Research on key circuit in CMOS fully integrated RFID devices
Author
Ma Hongbo ; Feng Quanyuan
Author_Institution
School of information science &technology, Southwest Jiaotong University, ChengDu, 610031, China
fYear
2006
fDate
6-9 Nov. 2006
Firstpage
1
Lastpage
4
Abstract
The cost of the RFID devices has strictly hampered the development and application of RFID. At present, due to the diversity of implemented technology of the sub-blocks in the RFID devices, such as the digital sub-block using CMOS technology, analog circuit implemented in CMOS or Bicmos process, yet radio frequency section using GaAs technology, and so on, especially, the reader including many different functional sub-blocks, that is the critical reason of the cost increasing but also unfit to higher levels of integration. Aiming at this problem, combining the complexity of the RFIC design, in this paper, a solution is firstly enounced that all the functional blocks is implemented in low cost standard CMOS technology, and then it is analyzed how the key circuit modules of the RFID devices is designed in detail. At last some design examples are presented to verify the good validity and feasibility.
Keywords
CMOS; RFIC; RFID; power amplifier; reader; tag;
fLanguage
English
Publisher
iet
Conference_Titel
Wireless, Mobile and Multimedia Networks, 2006 IET International Conference on
Conference_Location
hangzhou, China
ISSN
0537-9989
Print_ISBN
0-86341-644-6
Type
conf
Filename
5195392
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