DocumentCode :
496456
Title :
Research on key circuit in CMOS fully integrated RFID devices
Author :
Ma Hongbo ; Feng Quanyuan
Author_Institution :
School of information science &technology, Southwest Jiaotong University, ChengDu, 610031, China
fYear :
2006
fDate :
6-9 Nov. 2006
Firstpage :
1
Lastpage :
4
Abstract :
The cost of the RFID devices has strictly hampered the development and application of RFID. At present, due to the diversity of implemented technology of the sub-blocks in the RFID devices, such as the digital sub-block using CMOS technology, analog circuit implemented in CMOS or Bicmos process, yet radio frequency section using GaAs technology, and so on, especially, the reader including many different functional sub-blocks, that is the critical reason of the cost increasing but also unfit to higher levels of integration. Aiming at this problem, combining the complexity of the RFIC design, in this paper, a solution is firstly enounced that all the functional blocks is implemented in low cost standard CMOS technology, and then it is analyzed how the key circuit modules of the RFID devices is designed in detail. At last some design examples are presented to verify the good validity and feasibility.
Keywords :
CMOS; RFIC; RFID; power amplifier; reader; tag;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Wireless, Mobile and Multimedia Networks, 2006 IET International Conference on
Conference_Location :
hangzhou, China
ISSN :
0537-9989
Print_ISBN :
0-86341-644-6
Type :
conf
Filename :
5195392
Link To Document :
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