• DocumentCode
    496456
  • Title

    Research on key circuit in CMOS fully integrated RFID devices

  • Author

    Ma Hongbo ; Feng Quanyuan

  • Author_Institution
    School of information science &technology, Southwest Jiaotong University, ChengDu, 610031, China
  • fYear
    2006
  • fDate
    6-9 Nov. 2006
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The cost of the RFID devices has strictly hampered the development and application of RFID. At present, due to the diversity of implemented technology of the sub-blocks in the RFID devices, such as the digital sub-block using CMOS technology, analog circuit implemented in CMOS or Bicmos process, yet radio frequency section using GaAs technology, and so on, especially, the reader including many different functional sub-blocks, that is the critical reason of the cost increasing but also unfit to higher levels of integration. Aiming at this problem, combining the complexity of the RFIC design, in this paper, a solution is firstly enounced that all the functional blocks is implemented in low cost standard CMOS technology, and then it is analyzed how the key circuit modules of the RFID devices is designed in detail. At last some design examples are presented to verify the good validity and feasibility.
  • Keywords
    CMOS; RFIC; RFID; power amplifier; reader; tag;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Wireless, Mobile and Multimedia Networks, 2006 IET International Conference on
  • Conference_Location
    hangzhou, China
  • ISSN
    0537-9989
  • Print_ISBN
    0-86341-644-6
  • Type

    conf

  • Filename
    5195392