BSIM3v3.2 model parameter extraction and improved model used for RF simulation

The paper mainly introduce the DC parameter extraction process of BSIM3 model and the model improvement for RF simulation. First, we simply introduce the development of the BSIM3 model, and then we extract and optimize some DC parameters based on BSIM3 manual. At the same time, the paper provides the contrast between simulation and experiment. The BSIM3 can´t model the MOSFET precisely when the frequency becomes higher and higher. So we extend the BSIM3 model by adding some parasitic components. For instance, we add the gate resistance in order to simulate the distributed transmission line affect and NQS affect. We can remove the influence to the Y12 and Y22 by adding substrate resistance components. Adding capacitance and inductance is to simulate the parasitic affect between any two poles. At the end of this paper, we provide the S parameter contrastive curves between simulation and measurement.