DocumentCode
497158
Title
Vertical cell array using TCAT(Terabit Cell Array Transistor) technology for ultra high density NAND flash memory
Author
Jang, Younggoan ; Kim, Han-Soo ; Cho, Wonseok ; Cho, Hoosung ; Jinho Kim ; Sun Il Shim ; Younggoan Jang ; Jeong, Jae-Hun ; Son, Byoung-Keun ; Dong Woo Kim ; Kihyun ; Shim, Jae-Joo ; Jin Soo Lim ; Kim, Kyoung-Hoon ; Su Youn Yi ; Lim, Ju-Young ; Chung, Dewi
Author_Institution
Memory R&D Center, Samsung Electron. Co. Ltd., Yongin, South Korea
fYear
2009
fDate
16-18 June 2009
Firstpage
192
Lastpage
193
Abstract
Vertical NAND flash memory cell array by TCAT (terabit cell array transistor) technology is proposed. Damascened metal gate SONOS type cell in the vertical NAND flash string is realized by a unique dasiagate replacementpsila process. Also, conventional bulk erase operation of the cell is successfully demonstrated. All advantages of TCAT flash is achieved without any sacrifice of bit cost scalability.
Keywords
NAND circuits; flash memories; logic gates; transistors; NAND flash memory; SONOS type cell; TCAT; damascened metal gate; gate replacement; terabit cell array transistor; vertical NAND flash string; vertical cell array; Costs; Dielectric substrates; Etching; Moon; Nonhomogeneous media; Plugs; SONOS devices; Scalability; Sun; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 2009 Symposium on
Conference_Location
Honolulu, HI
Print_ISBN
978-1-4244-3308-7
Type
conf
Filename
5200595
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