DocumentCode
497163
Title
A direct observation on the structure evolution of memory-switching phenomena using in-situ TEM
Author
Cha, Dongkyu ; Jin Ahn, Su ; Park, S.Y. ; Horii, H. ; Kim, D.H. ; Kim, Y.K. ; Park, S.O. ; In Jung, U. ; Kim, Moon.J. ; Jiyoung Kim
Author_Institution
Mater. Sci. & Eng., Univ. of Texas at Dallas, Richardson, TX, USA
fYear
2009
fDate
16-18 June 2009
Firstpage
204
Lastpage
205
Abstract
This paper presents a real-time observation on microstructure evolution under electrical programming pulses directly on phase-change memory cells developed with 90-nm technology for the first time. The feasibility of this in-situ TEM experiment was successfully confirmed through the observed memory-switching behavior, and it was found that slow quenching crystallization enhanced the grain growth rather than the nucleation mechanism.
Keywords
TEM cells; crystallisation; phase change memories; electrical programming pulses; in-situ TEM; memory-switching phenomena; microstructure evolution; nucleation mechanism; phase-change memory cell; quenching crystallization; size 90 nm; Amorphous materials; Crystallization; Phase change memory; Probes; Tellurium; Temperature; Testing; Thermal conductivity; Threshold voltage; Transmission electron microscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 2009 Symposium on
Conference_Location
Honolulu, HI
Print_ISBN
978-1-4244-3308-7
Type
conf
Filename
5200600
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