Author :
Bidal, G. ; Boeuf, F. ; Denorme, S. ; Loubet, N. ; Huguenin, J.L. ; Perreau, P. ; Fleury, D. ; Leverd, F. ; Lagrasta, S. ; Barnola, S. ; Salvetat, T. ; Orlando, B. ; Beneyton, R. ; Clement, L. ; Pantel, R. ; Monfray, S. ; Ghibaudo, G. ; Skotnicki, T.
Abstract :
We report a new nanodot MOSFET, based on the use of Bulk wafer and Silicon-On-Nothing technology, requiring neither CMP nor extra photo-lithographic step. SRAM-application oriented nanodot devices were fabricated using this new process. Record performance among the nanometric gate-all-around MOSFET state-of-the-art is obtained thanks to a high quality transport.
Keywords :
MOSFET; SRAM chips; elemental semiconductors; nanoelectronics; nanostructured materials; semiconductor storage; silicon; CMP; SRAM-application; Si; bulk wafer; nanodot MOSFET; nanodot devices; photolithographic step; silicon-on-nothing technology; Epitaxial growth; Etching; Germanium silicon alloys; Lithography; MOSFET circuits; Morphology; Nanoscale devices; Random access memory; Silicon germanium; Substrates;
