• DocumentCode
    497178
  • Title

    Strained In0.53Ga0.47As n-MOSFETs: Performance boost with in-situ doped lattice-mismatched source/drain stressors and interface engineering

  • Author

    Chin, Hock-Chun ; Gong, Xiao ; Liu, Xinke ; Lin, Zhe ; Yeo, Yee-Chia

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore(NUS), Singapore, Singapore
  • fYear
    2009
  • fDate
    16-18 June 2009
  • Firstpage
    244
  • Lastpage
    245
  • Abstract
    We report the first demonstration of strained III-V n-MOSFETs with lattice-mismatched source/drain (S/D) stressors. Lateral tensile strain was induced by In0.4Ga0.6As S/D on the In0.53Ga0.47As channel. In-situ doping was incorporated as well for series resistance reduction. We also integrated SiH4+NH3 passivation for reduction of interface state density on In0.53Ga0.47As for the first time.
  • Keywords
    III-V semiconductors; MOSFET; gallium arsenide; indium compounds; passivation; semiconductor doping; In0.4Ga0.6As; In0.53Ga0.47As; in-situ doping; interface engineering; lateral tensile strain; lattice-mismatched source/drain stressors; passivation; strained III-V n-MOSFET; Annealing; Capacitive sensors; Dielectric substrates; Doping; Epitaxial growth; Fabrication; III-V semiconductor materials; MOSFET circuits; Passivation; Tensile strain;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 2009 Symposium on
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    978-1-4244-3308-7
  • Type

    conf

  • Filename
    5200615
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=497178