• DocumentCode
    497183
  • Title

    Cross-point phase change memory with 4F2 cell size driven by low-contact-resistivity poly-Si diode

  • Author

    Sasago, Y. ; Kinoshita, M. ; Morikawa, T. ; Kurotsuchi, K. ; Hanzawa, S. ; Mine, T. ; Shima, A. ; Fujisaki, Y. ; Kume, H. ; Moriya, H. ; Takaura, N. ; Torii, K.

  • Author_Institution
    Central Res. Lab., Hitachi, Ltd., Kokubunji, Japan
  • fYear
    2009
  • fDate
    16-18 June 2009
  • Firstpage
    24
  • Lastpage
    25
  • Abstract
    We have fabricated the cross-point phase change memory with a selection diode made of poly-Si. The selection diode was fabricated using a low-thermal-budget process that achieved low contact resistivity, high on-current density of 8 MA/cm2 and low off-current density of 100 A/cm2. The improvement in the properties of poly-Si diode makes the set/reset operation of the cross-point 4F2 cell possible, leading to the size reduction of phase change memory chip.
  • Keywords
    phase change memories; semiconductor diodes; 4F2 cell size; cross-point phase change memory; low contact resistivity; low-contact-resistivity; low-thermal-budget process; phase change memory chip; poly-Si diode; Conductivity; Diodes; Impurities; Laboratories; Mechanical engineering; Phase change materials; Phase change memory; Phased arrays; Thermal resistance; Tungsten; cross-point; phase change memory; poly-Si diode;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 2009 Symposium on
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    978-1-4244-3308-7
  • Type

    conf

  • Filename
    5200620
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=497183