• DocumentCode
    497193
  • Title

    The first observation of shot noise characteristics in 10-nm scale MOSFETs

  • Author

    Jeon, J. ; Lee, J. ; Kim, J. ; Park, C.H. ; Lee, H. ; Oh, H. ; Kang, H.-K. ; Park, B.-G. ; Shin, H.

  • Author_Institution
    ISRC, Seoul Nat. Univ., Seoul, South Korea
  • fYear
    2009
  • fDate
    16-18 June 2009
  • Firstpage
    48
  • Lastpage
    49
  • Abstract
    The high frequency drain current noise in nanoscale MOSFETs is carefully measured and compared with the shot and the thermal noise levels in all operating regions. For the first time, the shot noise characteristics are observed in the strong inversion region around-10 nm MOSFETs.
  • Keywords
    MOSFET; shot noise; thermal noise; high frequency drain current noise; inversion region; nanoscale MOSFET; shot noise characteristics; thermal noise levels; 1f noise; Acoustical engineering; Current measurement; Electrical resistance measurement; Frequency; Low-frequency noise; MOSFETs; Noise level; Noise measurement; Scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 2009 Symposium on
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    978-1-4244-3308-7
  • Type

    conf

  • Filename
    5200630
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=497193