Title :
The first observation of shot noise characteristics in 10-nm scale MOSFETs
Author :
Jeon, J. ; Lee, J. ; Kim, J. ; Park, C.H. ; Lee, H. ; Oh, H. ; Kang, H.-K. ; Park, B.-G. ; Shin, H.
Author_Institution :
ISRC, Seoul Nat. Univ., Seoul, South Korea
Abstract :
The high frequency drain current noise in nanoscale MOSFETs is carefully measured and compared with the shot and the thermal noise levels in all operating regions. For the first time, the shot noise characteristics are observed in the strong inversion region around-10 nm MOSFETs.
Keywords :
MOSFET; shot noise; thermal noise; high frequency drain current noise; inversion region; nanoscale MOSFET; shot noise characteristics; thermal noise levels; 1f noise; Acoustical engineering; Current measurement; Electrical resistance measurement; Frequency; Low-frequency noise; MOSFETs; Noise level; Noise measurement; Scattering;
Conference_Titel :
VLSI Technology, 2009 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-3308-7
