Title :
A new observation of strain-induced slow traps in advanced CMOS technology with process-induced strain using random telegraph noise measurement
Author :
Lin, M.H. ; Hsieh, E.R. ; Chung, Steve S. ; Tsai, C.H. ; Liu, P.W. ; Lin, Y.H. ; Tsai, C.T. ; Ma, G.H.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
In this paper, the hot-carrier induced oxide trap and its correlation with enhanced degradation in strained CMOS devices have been reported for the first time. First, the ID-RTN (drain current random telegraph noise) has been employed to study the HC stress induced slow oxide traps in strained nMOSFETs and pMOSFETs. Secondly, different behavior of the slow traps in nMOSFET and pMOSFET has been observed. Results show that the vertical compressive strain generates extra oxide defects and induces more scattering after the HC stress in CESL nMOSFET. This vertical strain in CESL also contributes to a non-negligible amount of extra device degradation. While, SiGe S/D pMOSFET shows different behavior in that the compressive strain in this structure shows no impact on its reliability.
Keywords :
CMOS integrated circuits; Ge-Si alloys; MOSFET; electron traps; hole traps; hot carriers; integrated circuit noise; semiconductor device noise; semiconductor device reliability; semiconductor materials; CMOS technology; HC stress; SiGe; compressive strain; device degradation; drain current random telegraph noise; hot-carrier induced oxide trap; nMOSFET; oxide defects; pMOSFET; process-induced strain; random telegraph noise measurement; reliability; slow traps; strain-induced traps; strained CMOS devices; vertical compressive strain; CMOS process; CMOS technology; Capacitive sensors; Compressive stress; Degradation; Hot carriers; MOSFETs; Noise measurement; Strain measurement; Telegraphy; Random Telegraph Noise; Slow trap; Strained-Si devices;
Conference_Titel :
VLSI Technology, 2009 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-3308-7
