High quality GeO2/Ge interface formed by SPA radical oxidation and uniaxial stress engineering for high performance Ge NMOSFETs

Author

Kobayashi, Masaharu ; Irisawa, Toshihumi ; Kope, Blanka M. ; Sun, Yun ; Saraswat, Krishna ; Wong, H-S Philip ; Pianetta, Piero ; Nishi, Yoshio

Author_Institution

Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA

fYear

2009

fDate

16-18 June 2009

Firstpage

76

Lastpage

77

Abstract

Slot-plane-antenna (SPA) radical oxidation of Ge is shown to realize (1) orientation independent, (2) small temperature dependent oxidation, (3) smooth interface and (4) low interface state density. Mobility enhancement under uniaxial stress was demonstrated in (100) Ge NFET fabricated by utilizing SPA radical oxidation, for the first time. Drive current of (100) Ge NFET can be enhanced under uniaxial stress in the ballistic transport regime, which satisfies ITRS 22 nm node high performance spec as a Ge CMOS platform.

Keywords

MOSFET; germanium compounds; slot antennas; GeO₂-Ge; NMOSFET; SPA radical oxidation; low interface state density; mobility enhancement; orientation independent; slot-plane-antenna radical oxidation; small temperature dependent oxidation; smooth interface; uniaxial stress engineering; Aluminum oxide; Annealing; Ballistic transport; CMOS process; Dielectric substrates; Electron mobility; Interface states; Oxidation; Stress; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2009 Symposium on

Conference_Location

Honolulu, HI

Print_ISBN

978-1-4244-3308-7

Type

conf

Filename

5200640