Title :
High hole mobility in multiple silicon nanowire gate-all-around pMOSFETs on (110) SOI
Author :
Chen, Jiezhi ; Saraya, Takuya ; Hiramoto, Toshiro
Author_Institution :
Inst. of Ind. Sci., Univ. of Tokyo, Tokyo, Japan
Abstract :
Systematic study on hole mobility in gate-all-around (GAA) multiple Si nanowire (NW) pFETs on (110) SOI is presented for the first time. [110]-NWs show high mobility, 2.4times enhancement over universal (100) mobility, even in high Ninv region and in narrow (25 nm) NWs. Furthermore, effects of uniaxial tensile stress are also investigated, indicating that [110] direction uniaxial stress is effective to modulate hole mobility in NWs.
Keywords :
MOSFET; elemental semiconductors; hole mobility; nanowires; semiconductor quantum wires; silicon; silicon-on-insulator; stress effects; (110) SOI; Si; [110] direction uniaxial stress; hole mobility; multiple silicon nanowire gate-all-around pMOSFETs; size 25 nm; uniaxial tensile stress effects; Degradation; Electron mobility; Electronic mail; Light scattering; MOSFETs; Nanoscale devices; Silicon; Temperature dependence; Tensile stress; Very large scale integration;
Conference_Titel :
VLSI Technology, 2009 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-3308-7
