Title :
Gate-all-around quantum-wire field-effect transistor with Dopant Segregation at Metal-Semiconductor-Metal heterostucture
Author :
Wong, Hoong-Shing ; Tan, Lian-Huat ; Chan, Lap ; Lo, Guo-Qiang ; Samudra, Ganesh ; Yeo, Yee-Chia
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
Abstract :
We report the first demonstration of dopant-segregated metal-semiconductor-metal (DS-MSM) heterostructure on Gate-All-Around Si quantum wire field-effect transistor (QWFET), achieving low external resistance and possibly injection velocity enhancement. ION enhancement of 72% and 26% over conventional QWFETs are obtained for n- and p- DS-MSM QWFETs, respectively. Record high single Si QWFET ION, normalized by quantum wire diameter, of 4.03 mA/mum (n-DS-MSM QWFET) and 1.5 mA/mum (p-DS-MSM QWFET) are reported. In addition, larger ION values are observed for <100> as compared to <110> channel orientation DS-MSM QWFETs.
Keywords :
field effect transistors; semiconductor doping; semiconductor quantum wires; dopant segregation; gate-all-around quantum-wire field-effect transistor; metal-semiconductor-metal heterostucture; CMOS technology; Contact resistance; FETs; Implants; Intrusion detection; Microelectronics; Quantum computing; Silicidation; Silicon; Wire;
Conference_Titel :
VLSI Technology, 2009 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-3308-7
