DocumentCode :
497222
Title :
Gate modulation of graphene contacts - on the scaling of graphene FETs
Author :
Chen, Zhihong ; Appenzeller, Joerg
Author_Institution :
IBM T.J. Watson Res. Center, Yorktown Heights, NY, USA
fYear :
2009
fDate :
16-18 June 2009
Firstpage :
128
Lastpage :
129
Abstract :
The nature of source/drain contacts in graphene field-effect transistors (GFETs) is investigated. We argue that the energy dispersion of the graphene portion underneath of the metal electrodes is substantially altered compared to its original. Moreover, different from other materials, the Fermi levels of these graphene segments are not pinned by the metal contacts, but instead can be modulated by the gate. Our experimental findings give important insights into the critical relevance of contacts for the scaling of graphene devices.
Keywords :
Fermi level; electrical contacts; graphene; modulation; organic field effect transistors; Fermi levels; GFET; energy dispersion; gate modulation; graphene contacts; graphene field effect transistors; metal electrodes; source/drain contacts; Charge carrier processes; Contacts; Dielectric substrates; Doping profiles; Electrodes; FETs; Gold; Nanotechnology; Photonic band gap; Voltage; FET; contacts; graphene; scaling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 2009 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-3308-7
Type :
conf
Filename :
5200659
Link To Document :
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